Sign In | Join Free | My webtextiles.com |
|
All ldmos rf power transistors wholesalers & ldmos rf power transistors manufacturers come from members. We doesn't provide ldmos rf power transistors products or service, please contact them directly and verify their companies info carefully.
Total 36576 products from ldmos rf power transistors Manufactures & Suppliers |
|
![]() |
Place of Origin:MALAYSIA Brand Name:ERICSSON Model Number:PTF080101S PTF080101S IS A LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ . Part NO: PTF080101S Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws ... |
Mega Source Elec.Limited
|
![]() |
Brand Name:VBE Model Number:VBE36015E2 Place of Origin:CHINA
|
VBE Technology Shenzhen Co., Ltd.
Guangdong |
![]() |
Brand Name:Analog Devices Inc. Model Number:AD9364BBCZ Place of Origin:Multi-origin AD9364BBCZ RF Power Transistor High Performing Reliable Power Solutions Product Name: AD9364BBCZ RF Power Transistors Description: The AD9364BBCZ RF power transistor is a high-power class AB transistor designed for use in commercial, industrial and ... |
Shenzhen Sai Collie Technology Co., Ltd.
|
![]() |
Brand Name:Texas Instruments Model Number:PD85035S-E Place of Origin:Malaysia ...RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS... |
Angel Technology Electronics Co
Hongkong |
![]() |
Brand Name:Mitsubishi Model Number:RD06HVF1 Place of Origin:CN ... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
![]() |
Brand Name:INNOTION Model Number:YP01401650T Place of Origin:Jiangsu, China ...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor... |
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu |
![]() |
Brand Name:Semelab / TT Electronics Model Number:D2085UK Place of Origin:UK ...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power |
Wisdtech Technology Co.,Limited
Guangdong |
![]() |
Brand Name:Original brand Model Number:STWA65N60DM6 Place of Origin:Original Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
![]() |
Brand Name:NXP Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
![]() |
Place of Origin:CN Brand Name:Original Factory Model Number:QPD1035 QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
|
![]() |
Model Number:BLF881 Place of Origin:Malaysia Brand Name:KAIGENG BLF881 N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF881 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
![]() |
Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
ChongMing Group (HK) Int'l Co., Ltd
|
![]() |
Brand Name:Hua Xuan Yang Model Number:AOD442 Place of Origin:ShenZhen China AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
![]() |
Model Number:2SK4115 Place of Origin:Guangdong, China Brand Name:ALL BRAND #detail_decorate_root .magic-0{vertical-align:top}#detail_decorate_root .magic-1{padding:0;margin:0;color:#333;font-size:14px;padding-left:4px;font-weight:bold;white-space:pre-wrap}#detail_decorate_root .magic-2{text-align:center}#detail_decorate_root .... |
ShenZhen QingFengYuan Technology Co.,Ltd.
|
![]() |
Brand Name:SWT Model Number:SW-PA-200018000-47C Place of Origin:China ... range of 2GHz to 18GHz, specifically targeting the Ku band. Frequency Range: This power amplifier is suitable for amplifying signals across the frequency range of 2GHz to 18GHz, falling within the Ku band. Key Features: Wideband Design: ... |
Nanjing Shinewave Technology Co., Ltd.
|
![]() |
Brand Name:original Model Number:M68702H Place of Origin:Original Manufacturer ...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
|
![]() |
Place of Origin:Guangdong, China Brand Name:LDSK Product overview 900mhz 860-930MHZ 50W module anti-drone module Power and Frequnecy support Customzation form 90MHZ- 5.8g, 10W,20W,30W, 40W, 50w,100W --The radio frequency and monitoring technical indicators of the power amplifier module stipulate the ... |
Shenzhen Ladasky Technology Co.,Ltd
|
![]() |
Brand Name:Anterwell Model Number:2SC1972 Place of Origin:original factory NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ... |
Anterwell Technology Ltd.
Guangdong |
![]() |
Brand Name:original Model Number:MRF9045LR1 Place of Origin:original ...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor... |
Walton Electronics Co., Ltd.
|