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60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

Categories Mos Field Effect Transistor
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: HXY4264
Product name: Mosfet Power Transistor
Junction temperature:: 150℃
Material: Silicon
Case: Tape/Tray/Reel
Type: mosfet transistor
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    60V Mos Field Effect Transistor N Channel AlphaSGT HXY4264 Silicon Material

    60V N-Channel AlphaSGT HXY4264

    Product Summary


    VDS60V
    ID (at VGS=10V)13.5A
    RDS(ON) (at VGS=10V)< 9.8mΩ
    RDS(ON) (at VGS=4.5V)< 13.5mΩ

    General Description


    Trench Power AlphaSGTTM technology

    Low RDS(ON)

    Low Gate Charge


    Applications


    High efficiency power supply

    Secondary synchronus rectifier



    Electrical Characteristics (T =25°C unless otherwise noted)


    A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The

    value in any given application depends on the user's specific board design.

    B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.

    C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

    initialT =25°C.

    D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.

    E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

    F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with

    2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

    G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.


    TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS


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